PART |
Description |
Maker |
5962-0151101TXC 5962-0151101QXC 5962-0151101 UT9Q5 |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 5E4(50krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 1E4(10krad(Si)). UT9Q512K32 16Megabit SRAM MCM UT9Q512K32 16Megabit SRAM MCM 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 5E4(50krad(Si)).
|
AEROFLEX[Aeroflex Circuit Technology]
|
AS8SLC512K32Q1-12L_883C AS8SLC512K32Q1-12L_IT AS8S |
512K x 32 SRAM SRAM Memory Array MCM
|
Austin Semiconductor
|
EUP3595QIR1 EUP3595JIR1 EUP3595 |
512K x 32, 3.3V, MCM, Async CMOS 5.0V, High Speed Static RAM 512K x 32, 5V, MCM, Rad Tol, Async Parallel White-LED Driver
|
德信科技股份有限公司 Eutech Microelectronics Inc
|
EUP2796JIR1 EUP2796 |
32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array, Multi-Chip Module (MCM) 双显示器白光LED驱动3/2X开关电容升 512K x 32, 5V, MCM, Even-Sectored 双显示器白光LED驱动3/2X开关电容升 Dual-Display White LED Driver with 3/2X Switched Capacitor Boost
|
Eutech Microelectronics, Inc. 德信科技股份有限公司 Eutech Microelectronics Inc
|
AD10242 AD10242-15 |
Dual, 12-Bit, 40 MSPS MCM A/D Converter Dual Channel, 12-Bit, 40 MSPS MCM A/D Converter with DC-Coupled Analog Input Signal Conditioning (AD9042 Core ADC)
|
Analog Devices
|
79C0408 79C0408RT2FH-15 79C0408RT2FK-15 79C0408RT2 |
4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 200 ns, DFP40 4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 120 ns, DFP40 4 Megabit EEPROM MCM 512K X 8 EEPROM 5V MODULE, 150 ns, DFP40 4 Megabit EEPROM MCM
|
Maxwell Technologies, Inc
|
WMS256K16-20DLM WMS256K16-25DLM WMS256K16-35DLM WM |
20ns; 256K x 16 monilithic SRAM, SMD 5962-96902 x16 SRAM
|
White Electronic Designs
|
LCL1512-L LCL1812-L |
MCM LNA
|
RFHIC
|
LCL2112-L LCL2312-L LCL2712-L |
MCM LNA
|
RFHIC
|
79LV0832RPQK-20 79LV0832RT1QK-25 79LV0832RT2QK-20 |
CB 6C 6#16 SKT RECP WALL 8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 250 ns, QFP96 8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 200 ns, QFP96
|
Maxwell Technologies, Inc
|
79C0832 79C0832RPQE-15 79C0832RPQE-20 79C0832RPQH- |
8 Megabit (256K x 32-Bit) EEPROM MCM
|
Maxwell Technologies ETC[ETC]
|
GBM2121-L GBM9021-L |
MCM Linear High Gain Linearity Module
|
RFHIC
|